参数资料
型号: FQB27N25TM_AM002
厂商: Fairchild Semiconductor
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH 250V 25.5A D2PAK
标准包装: 800
系列: QFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 250V
电流 - 连续漏极(Id) @ 25° C: 25.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 110 毫欧 @ 12.75A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 65nC @ 10V
输入电容 (Ciss) @ Vds: 2450pF @ 25V
功率 - 最大: 3.13W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D²PAK
包装: 带卷 (TR)
November 2013
FQI27N25
N-Channel QFET ? MOSFET
2 5 0 V, 25.5 A, 11 0 m?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
? 25.5 A, 2 5 0 V, R DS(on) = 11 0 m ? (Max.) @ V GS = 10 V,
I D = 12.75 A
? Low Gate Charge (Typ. 50 nC)
? Low Crss (Typ. 45 pF)
? 100% Avalanche Tested
D
DS
G
Absolute Maximum Ratings
I 2 -PAK
T C = 25°C unless otherwise noted .
G
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FQI27N25TU
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Thermal Characteristics
Thermal Resistance, Junction to Ambient (*1 in P ad of 2 - oz C opper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient ( M inimum P ad of 2 - oz C opper), Max.
2
FQI27N25TU
0.7
62.5
40
Unit
o C/W
?200 8 Fairchild Semiconductor Corporation
FQI27N25 Rev. C 1
1
www.fairchildsemi.com
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