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参数资料
| 型号： | FQB34N20LTM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 31A D2PAK |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 31A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 15.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 72nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 3900pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FQB34N20LTMDKR |
October 2013
FQB34N20L
N-Channel QFET ? MOSFET
200 V, 31 A, 75 m?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
? 31 A, 200 V, R DS(on) = 75 m ? (max.) @ V GS = 10 V ,
I D = 15.5 A
? Low G ate C harge ( T yp . 55 nC)
? Low Crss ( T yp . 52 pF)
? 100% A valanche T ested
? Low level gate drive requirement allowing direct
opration from logic drivers
? RoHS C ompliant
D
D
G
S
D 2 -PAK
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DSS
Drain-Source Voltage
Parameter
FQB34N20L TM
200
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
31
20
A
A
I DM
Drain Current
- Pulsed
(Note 1)
124
A
V GSS
Gate-Source Voltage
± 20
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
640
31
18
5.5
3.13
180
1.43
mJ
A
mJ
V/ns
W
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max .
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient ( * 1 in 2 pad of 2 oz copper), Max.
FQB34N20L TM
0.7
62.5
40
Unit
o C/W
? 2006 Fairchild Semiconductor Corporation
FQB34N20L Rev. C 1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FQB34N20TM_AM002 | MOSFET N-CH 200V 31A D2PAK |
| FQB34P10TM_F085 | MOSFET P-CH 100V 33.5A D2PAK |
| FQB44N10TM | MOSFET N-CH 100V 43.5A D2PAK |
| FQB4N80TM | MOSFET N-CH 800V 3.9A D2PAK |
| FQB50N06TM | MOSFET N-CH 60V 50A D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQB34N20LTM_AM002 | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQB34N20TM | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQB34N20TM_AM002 | 功能描述:MOSFET 200V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQB34P10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V P-Channel MOSFET |
| FQB34P10_13 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel QFET MOSFET |
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