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参数资料
| 型号： | FQB4N80TM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 3.9A D2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.6 欧姆 @ 1.95A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 880pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263-2 |
| 包装： | 标准包装 |
| 其它名称： | FQB4N80TMDKR |
October 2013
FQB4N80 / FQI4N80
N-Channel QFET ? MOSFET
800 V, 3.9 A, 3.6 ?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
? 3.9 A, 800 V, R DS(on) = 3.6 ? (Max . ) @V GS = 10 V,
I D = 1.95 A
? Low Gate Charge ( Typ. 19 nC)
? Low Crss ( Typ. 8.6 pF)
? 100% Avalanche Tested
D
D
G
DS
G
S
D 2 -PAK
G
I 2 -PAK
S
= 25 C unless otherwise noted.
Absolute Maximum Ratings T
C
o
Symbol
V DSS
Drain-Source Voltage
Parameter
FQB4N80 TM / FQI4N80 TU
800
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
3.9
2.47
A
A
I DM
Drain Current
- Pulsed
(Note 1)
15.6
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
460
3.9
13
4.0
3.13
130
1.04
mJ
A
mJ
V/ns
W
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Thermal Resistance, Junction to Ambient ( * 1 in pad of 2 oz copper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max .
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
2
FQB4N80TM
FQI4N80TU
0.96
62.5
40
Unit
o C/W
?2007 Fairchild Semiconductor Corporation
FQB4N80 / FQI4N80 Rev. C1
1
www.fairchildsemi.com
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