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参数资料
| 型号： | FQB7N60TM_WS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 7.4A D2PAK |
| 标准包装： | 800 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1 欧姆 @ 3.7A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1430pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 带卷 (TR) |
October 2013
FQB7N60 / FQI7N60
N-Channel QFET ? MOSFET
800 V, 3.9 A, 3.6 ?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
? 3.9 A, 800 V, R DS(on) = 3.6 ? (Max . ) @V GS = 10 V,
I D = 1.95 A
? Low Gate Charge ( Typ. 19 nC)
? Low Crss ( Typ. 8.6 pF)
? 100% Avalanche Tested
D
D
G
DS
G
S
D 2 -PAK
G
I 2 -PAK
S
= 25 C unless otherwise noted.
Absolute Maximum Ratings T
C
o
Symbol
V DSS
Drain-Source Voltage
Parameter
FQB7N60TM
FQB7N60TM_WS
FQI7N60TU
600
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
7.4
4.7
A
A
I DM
Drain Current
- Pulsed
(Note 1)
29.6
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum L ead T emperature for S oldering,
1/8 from C ase for 5 S econds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
580
7.4
14.2
4.5
3.13
142
1.14
-55 to +150
300
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Thermal Resistance, Junction to Ambient ( * 1 in P ad of 2 - oz C opper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max .
Thermal Resistance, Junction to Ambient ( M inimum P ad of 2 - oz C opper), Max.
2
FQB7N60TM
FQB7N60TM_WS
FQI7N60TU
0. 88
62.5
40
Unit
o C/W
?2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
1
www.fairchildsemi.com
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