- 您现在的位置：买卖IC网 > Datasheet目录432 > FQB8N60CTM (Fairchild Semiconductor)MOSFET N-CH 600V 7.5A D2PAK Datasheet资料下载
参数资料
| 型号： | FQB8N60CTM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 7.5A D2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change Notification 26/June/2007 |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 3.75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 36nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1255pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 标准包装 |
| 其它名称： | FQB8N60CTMFSDKR |
December 2013
FQB8N60C / FQI8N60C
N-Channel QFET ? MOSFET
6 00 V, 7.5 A, 1.2 ?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
? 7.5 A, 6 00 V, R DS(on) = 1 .2 ? (Max.) @ V GS = 10 V,
I D = 3.75 A
? Low Gate Charge (Typ. 28 nC)
? Low Crss (Typ. 12 pF)
? 100% Avalanche Tested
? RoHS Compliant
D
D
DS
G
S
D 2 -PAK
G
I 2 -PAK
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FQB8N60CTM / FQI8N60CTU
600
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
7.5
4.6
A
A
I DM
Drain Current
- Pulsed
(Note 1)
30
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C)*
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8 " from Case for 5 Seconds.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
230
7.5
14.7
4.5
3.13
147
1.18
-55 to +150
300
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Thermal Resistance, Junction to Ambient (*1 in P ad of 2 - oz C opper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient ( M inimum P ad of 2 - oz C opper), Max.
2
FQB8N60CTM /
FQI8N60CTU
0. 85
62.5
40
Unit
o C/W
?2003 Fairchild Semiconductor Corporation
FQB8N60C / FQI8N60C Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FQB8P10TM | MOSFET P-CH 100V 8A D2PAK |
| FQD10N20LTF | MOSFET N-CH 200V 7.6A DPAK |
| FQD11P06TF | MOSFET P-CH 60V 9.4A DPAK |
| FQD12N20LTF | MOSFET N-CH 200V 9A DPAK |
| FQD12P10TM_F085 | MOSFET P-CH 100V 9.4A DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQB8N60CTM_WS | 功能描述:MOSFET 600V, NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQB8P10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V P-Channel MOSFET |
| FQB8P10TM | 功能描述:MOSFET 100V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQB90N08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:80V N-Channel MOSFET |
| FQB90N08TM | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。