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参数资料
| 型号： | FQD11P06TF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 9.4A DPAK |
| 标准包装： | 2,000 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 185 毫欧 @ 4.7A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 550pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
Januray 201 4
FQD11P06 / FQU11P06
P-Channel QFET ? MOSFET
-60 V , -9.4 A, 185 m?
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications. .
Features
? -9.4 A, -6 0 V, R DS(on) = 185 m ? (Max.) @ V GS = - 10 V,
I D = -4.7 A
? Low Gate Charge (Typ. 13 nC)
? Low Crss (Typ. 4 5 pF)
? 100% Avalanche Tested
S
D
G
S
D-PAK
G
D
S
I-PAK
G
D
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQD11P06 TM / FQU11P06TU
-60
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-9.4
-5.95
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-37.6
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8 " from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
160
-9.4
3.8
-7.0
2.5
38
0.3
-55 to +150
300
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Thermal Resistance, Junction to Ambient ( * 1 in P ad of 2 - oz C opper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max .
Thermal Resistance, Junction to Ambient ( M inimum P ad of 2 - oz C opper), Max.
2
FQD11P06 TM /
FQU11P06TU
3.28
110
50
Unit
o C/W
?2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C 2
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FQD11P06TM | 功能描述:MOSFET TO-252 DPAK P-CH 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQD1200MK5 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Hybrid analog/digital video module |
| FQD1216LME/I H-5 | 功能描述:射频模块 FM TUNER RoHS:否 制造商:Linx Technologies 产品:Transceiver Modules 频带:902 MHz to 928 MHz 输出功率:- 15.5 dBm to + 12.5 dBm 接口类型:UART 工作电源电压:- 0.3 VDC to + 5.5 VDC 传输供电电流:38.1 mA 接收供电电流:22.7 mA 天线连接器类型:U.FL 最大工作温度:+ 85 C 尺寸:1.15 mm x 0.63 mm x 0.131 mm |
| FQD1216LME/I V-5 | 功能描述:射频模块 FM TUNER RoHS:否 制造商:Linx Technologies 产品:Transceiver Modules 频带:902 MHz to 928 MHz 输出功率:- 15.5 dBm to + 12.5 dBm 接口类型:UART 工作电源电压:- 0.3 VDC to + 5.5 VDC 传输供电电流:38.1 mA 接收供电电流:22.7 mA 天线连接器类型:U.FL 最大工作温度:+ 85 C 尺寸:1.15 mm x 0.63 mm x 0.131 mm |
| FQD1216LME/P H-5 | 功能描述:射频模块 FM TUNER RoHS:否 制造商:Linx Technologies 产品:Transceiver Modules 频带:902 MHz to 928 MHz 输出功率:- 15.5 dBm to + 12.5 dBm 接口类型:UART 工作电源电压:- 0.3 VDC to + 5.5 VDC 传输供电电流:38.1 mA 接收供电电流:22.7 mA 天线连接器类型:U.FL 最大工作温度:+ 85 C 尺寸:1.15 mm x 0.63 mm x 0.131 mm |
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