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参数资料
| 型号： | FQD12P10TM_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 9.4A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 290 毫欧 @ 4.7A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 800pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
Febr uary 20 10
FQD12P10TM_F085
100V P-Channel MOSFET
General Description
Features
tm
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
D
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-9.4A, -100V, R DS(on) = 0.29 ? @V GS = -10 V
Low gate charge ( typical 21 nC)
Low Crss ( typical 65 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Qualified to AEC Q101
RoHS Compliant
D
G
G
S
D-PAK
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
S
Symbol
V DSS
Drain-Source Voltage
Parameter
Ratings
-100
Units
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-9.4
-6.0
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-37.6
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
370
-9.4
5.0
-6.0
2.5
50
0.4
mJ
A
mJ
V/ns
W
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 ! from case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
2.5
50
110
Units
°C / W
°C / W
°C / W
* When mounted on the minimum pad size recommended (PCB Mount)
? 20 10 Fairchild Semiconductor Corporation
F Q D 12P10TM _F085 Rev. A
1
www.fairchildsemi.com
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