- 您现在的位置：买卖IC网 > Datasheet目录432 > FQD18N20V2TF (Fairchild Semiconductor)MOSFET N-CH 200V 15A DPAK Datasheet资料下载
参数资料
| 型号： | FQD18N20V2TF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 15A DPAK |
| 标准包装： | 2,000 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 140 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1080pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
January 201 4
FQD18N20V2
N-Channel QFET ? MOSFET
200 V, 15 A, 14 0 m?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
? 15 A, 200 V, R DS(on) = 14 0 m ? (Max.) @ V GS = 10 V,
I D = 7.5 A
? Low Gate Charge (Typ. 20 nC)
? Low Crss (Typ. 25 pF)
? 100% Avalanche Tested
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FQD18N20V2TM
200
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
15
9.75
A
A
I DM
Drain Current
- Pulsed
(Note 1)
60
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum L ead L emperature for L oldering,
1/8" from Case for 5 Seconds.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
340
15
8.3
6.5
2.5
83
0.67
-55 to +150
300
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
2
FQD18N20V2TM
1.5
110
50
Unit
o C/W
?2009 Fairchild Semiconductor Corporation
FQD18N20V2 Rev. C2
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FQD19N10LTF | MOSFET N-CH 100V 15.6A DPAK |
| FQD19N10TM | MOSFET N-CH 100V 15.6A DPAK |
| FQD1N60CTF | MOSFET N-CH 600V 1A DPAK |
| FQD20N06LTF | MOSFET N-CH 60V 17.2A DPAK |
| FQD20N06TF | MOSFET N-CH 60V 16.8A DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQD18N20V2TM | 功能描述:MOSFET 200V N-Ch adv QFET V2 Series RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQD19N10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V N-Channel MOSFET |
| FQD19N10_09 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V N-Channel MOSFET |
| FQD19N10_13 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel QFET MOSFET |
| FQD19N10L | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V LOGIC N-Channel MOSFET |
发布紧急采购，3分钟左右您将得到回复。