- 您现在的位置：买卖IC网 > Datasheet目录432 > FQB4N80TM (Fairchild Semiconductor)MOSFET N-CH 800V 3.9A D2PAK Datasheet资料下载
参数资料
| 型号： | FQB4N80TM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 3.9A D2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.6 欧姆 @ 1.95A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 880pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263-2 |
| 包装： | 标准包装 |
| 其它名称： | FQB4N80TMDKR |
Package Marking and Ordering Information
Part Number
FQB4N80TM
FQI4N80TU
Top Mark
FQB4N80
FQI4N80
Package
D 2 -PAK
I 2 -PAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
24 mm
N/A
Quantity
800 units
50 units
= 25 C unless otherwise noted.
Electrical Characteristics T
C
o
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 800 V, V GS = 0 V
V DS = 640 V, T C = 125°C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
800
--
--
--
--
--
--
0.95
--
--
--
--
--
--
10
100
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
3.0
--
5.0
V
R DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = 10 V, I D = 1.95 A
V DS = 50 V, I D = 1.95 A
--
--
2.8
3.8
3.6
--
?
S
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DD = 400 V, I D = 3.9 A,
R G = 25 ?
--
--
--
--
--
--
680
75
8.6
16
45
35
880
100
12
40
100
80
pF
pF
pF
ns
ns
ns
t f
Turn-Off Fall Time
(N ote 4)
--
35
80
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 640 V, I D = 3.9 A,
V GS = 10 V
(N ote 4)
--
--
--
19
4.2
9.1
25
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
3.9
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
15.6
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 3.9 A
V GS = 0 V, I S = 3.9 A,
dI F / dt = 100 A/ μ s
--
--
--
--
575
3.65
1.4
--
--
V
ns
μ C
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 57 mH, I AS = 3.9 A, V DD = 50 V, R G = 25 ? , Starting T J = 25 o C
3. I SD ≤ 3.9 A, di/dt ≤ 2 00 A/μs, V DD ≤ BV DSS , Starting T J = 25 o C
4. Essentially independent of operating temperature
?2007 Fairchild Semiconductor Corporation
FQB4N80 / FQI4N80 Rev. C1
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FQB50N06TM | MOSFET N-CH 60V 50A D2PAK |
| FQB55N10TM | MOSFET N-CH 100V 55A D2PAK |
| FQB5N90TM | MOSFET N-CH 900V 5.4A D2PAK |
| FQB7N60TM_WS | MOSFET N-CH 600V 7.4A D2PAK |
| FQB7N80TM_AM002 | MOSFET N-CH 800V 6.6A D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQB4N90 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:900V N-Channel MOSFET |
| FQB4N90TM | 功能描述:MOSFET 900V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQB4P25 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V P-Channel MOSFET |
| FQB4P25TM | 功能描述:MOSFET 250V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQB4P40 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:400V P-Channel MOSFET |
发布紧急采购，3分钟左右您将得到回复。