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| 型号： | FQB34N20LTM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 31A D2PAK |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 31A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 15.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 72nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 3900pF @ 25V |
| 功率 - 最大： | 3.13W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FQB34N20LTMDKR |
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
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No Identification Needed
Obsolete
Product Status
Formative / In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
? 2006 Fairchild Semiconductor Corporation
FQB34N20L Rev. C 1
8
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FQB34N20TM_AM002 | MOSFET N-CH 200V 31A D2PAK |
| FQB34P10TM_F085 | MOSFET P-CH 100V 33.5A D2PAK |
| FQB44N10TM | MOSFET N-CH 100V 43.5A D2PAK |
| FQB4N80TM | MOSFET N-CH 800V 3.9A D2PAK |
| FQB50N06TM | MOSFET N-CH 60V 50A D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQB34N20LTM_AM002 | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQB34N20TM | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQB34N20TM_AM002 | 功能描述:MOSFET 200V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQB34P10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V P-Channel MOSFET |
| FQB34P10_13 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel QFET MOSFET |
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