- 您现在的位置：买卖IC网 > PDF目录18446 > FQD19N10TM_F080 (Fairchild Semiconductor)MOSFET N-CH 100V 15.6A DPAK PDF资料下载
参数资料
| 型号： | FQD19N10TM_F080 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 15.6A DPAK |
| 产品变化通告： | Product Discontinuation 14/Mar/2011 |
| 标准包装： | 2,500 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 15.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 7.8A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 780pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
November 2013
FQD19N10
N-Channel QFET ? MOSFET
1 00 V, 15.6 A, 100 m Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
? 15.6 A, 100 V, R DS(on) = 100 m ? (Max . ) @ V GS = 10 V,
I D = 7.8 A
? Low Gate Charge (Typ. 19 nC)
? Low Crss (Typ. 32 pF)
? 100% Avalanche Tested
D
D
G
S
D-PAK
G
S
= 25 C unless otherwise noted.
Absolute Maximum Ratings T
C
o
Symbol
V DSS
Drain-Source Voltage
Parameter
FQD19N10 TM
100
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
15.6
9.8
A
A
I DM
Drain Current
- Pulsed
(Note 1)
62.4
A
V GSS
Gate-Source Voltage
? 25
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25°C) *
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum L ead T emperature for S oldering,
1/8 " from C ase for 5 S econds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
220
15.6
5.0
6.0
2.5
50
0.4
-55 to +150
300
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max .
Thermal Resistance, Junction to Ambient ( M inimum P ad of 2 - oz C opper), Max.
Thermal Resistance, Junction to Ambient ( * 1 in 2 P ad of 2 - oz C opper), Max.
FQD19N10TM
2. 5
110
50
Unit
o C/W
?2007 Fairchild Semiconductor Corporation
FQD19N10 Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FXO-HC730-16.789 | OSC 16.789 MHZ 3.3V HCMOS SMD |
| ABLJO-100.000MHZ-T2 | OSCILLATOR 100.000 MHZ 3.3V SMD |
| B32620A4822J289 | FILM CAP 0.0082UF 5% 400V |
| 3310Y-001-104 | POT 100K OHM 9MM SQ PLASTIC |
| 0041.8843.7107 | SWITCH PB NON-ILL SPST-NO ROUND |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQD-1F | 制造商:SR COMPONENTS 功能描述: 制造商:SR Components Inc 功能描述: |
| FQD-1F-1000 | 制造商:SR Components Inc 功能描述: |
| FQD-1I | 制造商:SR Components Inc 功能描述: |
| FQD1N50 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FQD1N50B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
发布紧急采购，3分钟左右您将得到回复。