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参数资料
| 型号： | FQD19N10TM_F080 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 15.6A DPAK |
| 产品变化通告： | Product Discontinuation 14/Mar/2011 |
| 标准包装： | 2,500 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 15.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 7.8A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 780pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
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?*
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative / In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
?2007 Fairchild Semiconductor Corporation
FQD19N10 Rev. C1
8
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FQD-1F | 制造商:SR COMPONENTS 功能描述: 制造商:SR Components Inc 功能描述: |
| FQD-1F-1000 | 制造商:SR Components Inc 功能描述: |
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