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参数资料
| 型号： | FQD19N10TM_F080 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 15.6A DPAK |
| 产品变化通告： | Product Discontinuation 14/Mar/2011 |
| 标准包装： | 2,500 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 15.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 7.8A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 780pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
Package Marking and Ordering Information
Part Number
FQD19N10TM
Top Mark
FQD19N10
Package
D-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
= 25 C unless otherwise noted.
Electrical Characteristics T
C
o
Symbol
?
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
?
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 ? A
I D = 250 ? A, Referenced to 25°C
V DS = 100 V, V GS = 0 V
V DS = 80 V, T C = 125°C
V GS = 25 V, V DS = 0 V
V GS = -25 V, V DS = 0 V
100
--
--
--
--
--
--
0.1
--
--
--
--
--
--
1
10
100
-100
V
V/°C
? A
? A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
?
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 ? A
V GS = 10 V, I D = 7.8 A
V DS = 40 V, I D = 7.8 A
2.0
--
--
--
0.078
11
4.0
0.1
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
?
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
600
165
32
780
215
40
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 50 V, I D = 19 A,
R G = 25 ?
V DS = 80 V, I D = 19 A,
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
7.5
150
20
65
19
3.9
9.0
25
310
50
140
25
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
15.6
62.4
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 15.6 A
V GS = 0 V, I S = 19 A,
dI F / dt = 100 A/ ? s
--
--
--
--
78
200
1.5
--
--
V
ns
nC
1. Repetitive r ating : p ulse - width limited by maximum junction temperature .
2. L = 1 .35 mH, I AS = 15.6 A, V DD = 25 V, R G = 25 ? , s tarting T J = 25 o C .
3. I SD ≤ 19 A , di/dt ≤ 3 00 A/μs, V DD ≤ BV DSS , s tarting T J = 25 o C .
4. Essentially independent of operating temperature .
?2007 Fairchild Semiconductor Corporation
FQD19N10 Rev. C1
2
www.fairchildsemi.com
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