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参数资料
| 型号： | FQI34P10TU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 33.5A I2PAK |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 33.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 16.75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 110nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2910pF @ 25V |
| 功率 - 最大： | 3.75W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | I2PAK |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FQB34P10TM
Top Mark
FQB34P10
Package
D 2 -PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS Drain-Source Breakdown Voltage
V GS = 0 V, I D = -250 μ A
-100
--
--
V
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
I D = -250 μ A, Referenced to 25°C
V DS = -100 V, V GS = 0 V
V DS = -80 V, T C = 150°C
V GS = -25 V, V DS = 0 V
V GS = 25 V, V DS = 0 V
--
--
--
--
--
-0.1
--
--
--
--
--
-1
-10
-100
100
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = -250 μ A
-2.0
--
-4.0
V
R DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = -10 V, I D = -16.75 A
V DS = -40 V, I D = -16.75 A
--
--
0.049
23
0.06
--
?
S
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
V DS = -25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
2240
730
170
2910
950
220
pF
pF
pF
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
t f Turn-Off Fall Time
V DD = -50 V, I D = -33.5 A,
R G = 25 ?
(Note 4)
--
--
--
--
25
250
160
210
60
510
330
430
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = -80 V, I D = -33.5 A,
V GS = -10 V
(Note 4)
--
--
--
85
15
45
110
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
-33.5
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-134
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = -33.5 A
V GS = 0 V, I S = -33.5 A,
dI F / dt = 100 A/ μ s
--
--
--
--
160
0.88
-4.0
--
--
V
ns
μ C
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = mH, I AS = -33.5 A, V DD = -25 V, R G = 25 ?, starting T J = 25°C.
3. I SD ≤ - 33.5 A, di/dt ≤ 300 A/ μ s , V DD ≤ BV DSS, starting T J = 25°C.
4. Essentially independent of operating temperature.
?200 0 Fairchild Semiconductor Corporation
FQB34P10 Rev. C 1
2
www.fairchildsemi.com
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