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参数资料
| 型号： | FQI3N60 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 3 A, 600 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 封装： | I2PAK-3 |
| 文件页数： | 9/9页 |
| 文件大小： | 581K |
| 代理商： | FQI3N60 |
2000 Fairchild Semiconductor International
Rev. A, January 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
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CoolFET
CROSSVOLT
E
2
CMOS
FACT
FACT Quiet Series
FAST
FASTr
GTO
HiSeC
ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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INTERNATIONAL.
As used herein:
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when properly used in accordance with instructions for use
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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Obsolete
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This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
相关PDF资料 |
PDF描述 |
|---|---|
| FQB3N80 | 800V N-Channel MOSFET |
| FQI3N80 | 800V N-Channel MOSFET |
| FQB3N90 | 900V N-Channel MOSFET(漏源电压为900V的N沟道增强型MOSFET) |
| FQI3N90 | 900V N-Channel MOSFET(漏源电压为900V的N沟道增强型MOSFET) |
| FQB3P20 | 200V P-Channel MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQI3N80 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET |
| FQI3N80TU | 功能描述:MOSFET 800V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQI3N90 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:900V N-Channel MOSFET |
| FQI3N90TU | 功能描述:MOSFET 900V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQI3P20 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V P-Channel MOSFET |
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