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参数资料
| 型号： | FQP8N80C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 8A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change Notification 26/June/2007 |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.55 欧姆 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2050pF @ 25V |
| 功率 - 最大： | 178W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 其它名称： | FQP8N80C-ND FQP8N80CFS |
Package Marking and Ordering Information
Part Number
FQP8N80C
FQPF8N80C
FQPF8N80CYDTU
Top Mark
FQP8N80C
FQPF8N80C
FQPF8N80C
Package
TO-220
TO-220F
TO-220F
(Y-formed)
Packing Method
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 800 V, V GS = 0 V
V DS = 640 V, T C = 125°C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
800
--
--
--
--
--
--
0.5
--
--
--
--
--
--
10
100
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
3.0
--
5.0
V
R DS(on)
Static Drain-Source
On-Resistance
V GS = 10 V, I D = 4 A
--
1.29
1.55
?
g FS
Forward Transconductance
V DS = 50 V, I D = 4 A
(Note 4)
--
5.6
--
S
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
1580
135
13
2050
175
17
pF
pF
pF
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
t f Turn-Off Fall Time
V DD = 400 V, I D = 8 A,
R G = 25 ?
(Note 4, 5)
--
--
--
--
40
110
65
70
90
230
140
150
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 640 V, I D = 8 A,
V GS = 10 V
(Note 4, 5)
--
--
--
35
10
14
45
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
8
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
32
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 8 A
--
--
1.4
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 8 A,
dI F / dt = 100 A/ μ s
(Note 4)
--
--
690
8.2
--
--
ns
μ C
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 25 mH, I AS = 8 A, V DD = 50 V, R G = 25 ?, starting T J = 25°C.
3. I SD ≤ 8 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS, starting T J = 25°C.
4. Pulse test : pulse-width ≤ 300 μ s, duty cycle ≤ 2%.
5. Essentially independent of operating temperature.
?2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
2
www.fairchildsemi.com
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