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| 型号： | FQP9P25 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 250V 9.4A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 620 毫欧 @ 4.7A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1180pF @ 25V |
| 功率 - 最大： | 120W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 其它名称： | FQP9P25-ND FQP9P25FS |
October 2013
FQP9P25
P-Channel QFET ? MOSFET
-250 V, -9.4 A, 620 m?
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
? -9.4 A, -250 V, R DS(on) = 0.62 ? (Max.) @V GS = -10 V ,
I D = -4.7 A
? Low gate charge ( typ . 29 nC)
? Low Crss ( typ . 27 pF)
? 100% avalanche tested
S
G
GD
S
TO-220
D
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DSS
Drain-Source Voltage
Parameter
FQP9P25
-250
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-9.4
-5.9
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-37.6
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
650
-9.4
12
-5.5
120
0.96
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 ” from case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Junction-to-Ambient , Max.
FQP9P25
1.04
62.5
Unit
°C / W
°C / W
? 2000 Fairchild Semiconductor Corporation
FQP9P25 Rev. C0
1
www.fairchildsemi.com
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