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参数资料
| 型号： | FQP9P25 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 250V 9.4A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 620 毫欧 @ 4.7A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1180pF @ 25V |
| 功率 - 最大： | 120W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 其它名称： | FQP9P25-ND FQP9P25FS |
Package Marking and Ordering Information
Device Marking
FQP9P25
Device
FQP9P25
Package
TO220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = -250 μ A
I D = -250 μ A, Referenced to 25°C
V DS = -250 V, V GS = 0 V
V DS = -200 V, T C = 125°C
V GS = -30 V, V DS = 0 V
V GS = 30 V, V DS = 0 V
-250
--
--
--
--
--
--
-0.2
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = -250 μ A
V GS = -10 V, I D = -4.7 A
V DS = -40 V, I D = -4.7 A
-3.0
--
--
--
0.48
5.7
-5.0
0.62
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
910
170
27
1180
220
35
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -125 V, I D = -9.4 A,
R G = 25 ?
V DS = -200 V, I D = -9.4 A,
V GS = -10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
20
150
45
65
29
7.6
14
50
310
100
140
38
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
-9.4
-37.6
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = -9.4 A
V GS = 0 V, I S = -9.4 A,
dI F / dt = 100 A/ μ s
--
--
--
--
190
1.45
-5.0
--
--
V
ns
μ C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 11.8mH, I AS = -9.4A, V DD = -50V, R G = 25 ?, Starting T J = 25°C
3. I SD ≤ -9.4A, di/dt ≤ 300A/ μ s, V DD ≤ BV DSS, Starting T J = 25°C
4. Essentially independent of operating temperature
? 2000 Fairchild Semiconductor Corporation
FQP9P25 Rev. C0
2
www.fairchildsemi.com
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