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| 型号： | FQPF10N50CF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 10A TO-220F |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | FRFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 610 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 56nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2096pF @ 25V |
| 功率 - 最大： | 48W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
November 2013
F QPF10N50CF
N-Channel QFET ? FRFET ? MOSFET
5 00 V, 1 0 A, 610 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
Features
? 10 A, 500 V, R DS(on) = 610 mΩ (Max.) @ V GS = 10 V, I D = 5 A
? Low Gate Charge (Typ. 43 nC)
? Low C rss (Typ. 16 pF)
? 100% Avalanche Tested
? Fast Recovery Body Diode
D
D
G
S
TO-220F
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FQPF10N50CF
500
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
10 *
6.35 *
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
40 *
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
388
10
14.3
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate above 25 ° C
48
0.38
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FQPF10N50CF
2.58
62.5
Unit
o C/W
?2007 Fairchild Semiconductor Corporation
FQPF10N50CF Rev. C1
1
www.fairchildsemi.com
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