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| 型号： | FQPF22P10 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 13.2A TO-220F |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 13.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 6.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1500pF @ 25V |
| 功率 - 最大： | 45W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
March 2013
FQPF22P10
P -Channel QFET ? MOSFET
- 10 0 V, - 13.2 A, 1 2 5 m Ω
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor ? ’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
? - 13.2 A, - 10 0 V, R DS(on) = 1 2 5 mΩ(Max.) @V GS =-10 V, I D =- 6.6 A
? Low G ate C harge ( Typ. 40 nC)
? Low Crss ( Typ. 160 pF)
? 100% A valanche T ested
? 175°C Maximum Junction Temperature Rating
D
G
GD S
TO-220F
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DSS
Drain-Source Voltage
Parameter
FQPF22P10
-100
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-13.2
-9.3
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-52.8
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
710
-13.2
4.5
-6.0
45
0.3
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +175
300
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ
--
--
Max
3.3
62.5
Unit
°C / W
°C / W
?20 0 2 Fairchild Semiconductor Corporation
FQP F 22P10 Rev. C0
www.fairchildsemi.com
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