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| 型号： | FQPF8N60CFT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 6.26A TO-220F |
| 标准包装： | 50 |
| 系列： | FRFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.26A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 3.13A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 36nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1255pF @ 25V |
| 功率 - 最大： | 48W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
December 2013
FQPF8N60CF
N-Channel QFET ? FRFET ? MOSFET
6 00 V, 6.26 A, 1.5 Ω
Description
This N-Channel enhancement mode power MOSFET is produced
using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
? 6.26 A, 6 00 V, R DS(on) = 1.5 ? (Max.) @ V GS = 10 V, I D = 3 .13 A
? Low Gate Charge (Typ. 28 nC)
? Low Crss (Typ. 12 pF)
? 100% Avalanche Tested
D
D
G
S
Absolute Maximum Ratings
TO-220F
T C = 25°C unless otherwise noted .
G
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FQPF8N60CFT
600
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
6.26*
3.96*
A
A
I DM
Drain Current
- Pulsed
(Note 1)
25*
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum L ead T emperature for S oldering,
1/8 " from C ase for 5 S econds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
160
6.26
14.7
4.5
48
0.38
-55 to +150
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FQPF8N60CFT
2.6
62.5
Unit
o C/W
?200 6 Fairchild Semiconductor Corporation
FQPF8N60CF Rev C 1
1
www.fairchildsemi.com
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