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参数资料
| 型号： | FQT3P20TF_SB82100 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 200V 670MA SOT-223-4 |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 670mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.7 欧姆 @ 335mA，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 250pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-4 |
| 包装： | 标准包装 |
| 其它名称： | FQT3P20TF_SB82100DKR |
Package Marking and Ordering Information
Device Marking
FQT3P20
Device
FQT3P20TF
Package
SOT-223
Reel Size
13"
Tape Width
12 mm
Quantity
2500 units
Electrical Characteristics
T C = 25°C unless otherwise noted .
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
? B VDSS /
? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = -250 μ A
I D = -250 μ A, Referenced to 25°C
V DS = -200 V, V GS = 0 V
V DS = -160 V, T C = 125°C
V GS = -30 V, V DS = 0 V
V GS = 30 V, V DS = 0 V
-200
--
--
--
--
--
--
-0.18
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = -250 μ A
V GS = -10 V, I D = -0.335 A
V DS = -40 V, I D = -0.335 A
-3.0
--
--
--
2.06
0.7
-5.0
2.7
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
190
45
7.5
250
60
10
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -100 V, I D = -2.8 A,
R G = 25 ?
V DS = -160 V, I D = -2.8 A,
V GS = -10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
8.5
35
12
25
6.0
1.7
2.9
25
80
35
60
8.0
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
-0.67
-2.7
A
A
V SD
trr
Qrr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = -0.67 A
V GS = 0 V, I S = -2.8 A,
dI F / dt = 100 A/ μ s
--
--
--
--
100
0.34
-5.0
--
--
V
ns
μ C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 500mH, I AS = -0.67A, V DD = -50V, R G = 25 ?, Starting T J = 25°C
3. I SD ≤ -2.8A, di/dt ≤ 300A/ μ s, V DD ≤ BV DSS, Starting T J = 25°C
4. Essentially independent of operating temperature
?2001 Fairchild Semiconductor Corporation
FQT3P20 Rev. C0
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FQT4N20 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQT4N20L | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V LOGIC N-Channel MOSFET |
| FQT4N20LTF | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQT4N20TF | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQT4N25 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
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