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| 型号： | FQT3P20TF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 200V 0.67A SOT-223 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 670mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.7 欧姆 @ 335mA，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 250pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-4 |
| 包装： | 标准包装 |
| 其它名称： | FQT3P20TFDKR |
October 2013
FQT3P20
P -Channel QFET ? MOSFET
- 200 V, -0.67 A, 2.7 Ω
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
? -0.67 A, -200 V, R DS(on) = 2.7 ? (Max.) @V GS = 10 V ,
I D = 0.335 A
? Low G ate C harge ( T yp . 6.0 nC)
? Low Crss ( T yp . 7.5 pF)
D
D
S
SOT-223
G
D
G
D
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQT3P20 TF
-200
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 70°C)
-0.67
-0.53
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-2.7
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
150
-0.67
0.25
-5.5
2.5
0.02
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R θ JA
Parameter
Thermal Resistance, Junction-to-Ambient
FQT3P20TF
50
Unit
°C / W
?2001 Fairchild Semiconductor Corporation
FQT3P20 Rev. C0
1
www.fairchildsemi.com
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| FQT3P20TF_SB82100 | 功能描述:MOSFET 250V 0.11OHM 25.5A MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FQT4N20L | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V LOGIC N-Channel MOSFET |
| FQT4N20LTF | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQT4N20TF | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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