参数资料
型号: FSBB20CH60F
厂商: Fairchild Semiconductor
文件页数: 5/14页
文件大小: 0K
描述: IC SMART POWER MOD 20A SPM27-CA
产品培训模块: Smart Power
产品变化通告: Wire Bonding Change 06/April/2007
标准包装: 10
系列: SPM™
类型: IGBT
配置: 3 相
电流: 20A
电压: 600V
电压 - 隔离: 2500Vrms
封装/外壳: SPM27CA
产品目录页面: 1223 (CN2011-ZH PDF)
配用: FEB154-ND - BOARD EVAL FOR FSBB20CH60
Absolute Maximum Ratings (T J = 25°C,
Inverter Part
unless otherwise specified.)
Symbol
V PN
V PN(Surge)
V CES
± I C
± I CP
P C
T J
Parameter
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
Conditions
Applied between P- N U , N V , N W
Applied between P- N U , N V , N W
T C = 25°C
T C = 25°C, Under 1ms Pulse Width
T C = 25°C per Chip
(2nd Note 1)
Rating
450
500
600
20
40
61
-20 ~ 125
Unit
V
V
V
A
A
W
°C
2nd Notes:
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM ? 3 product is 150 ? C (at T C ? 100 ? C). However, to insure safe operation of the
Motion SPM 3 product, the average junction temperature should be limited to T J(ave) ? 125 ? C (at T C ? 100 ? C)
Control Part
Symbol
V CC
Parameter
Control Supply Voltage
Conditions
Applied between V CC(UH) , V CC(VH) , V CC(WH) , V CC(L) -
Rating
20
Unit
V
COM
V BS
High-Side Control Bias
Applied between V B(U) - V S(U) , V B(V) - V S(V) , V B(W) -
20
V
Voltage
V S(W)
V IN
Input Signal Voltage
Applied between IN (UH) , IN (VH) , IN (WH) , IN (UL) , IN (VL) ,
-0.3 ~ 17
V
IN (WL) - COM
V FO
I FO
Fault Output Supply Voltage
Fault Output Current
Applied between V FO - COM
Sink Current at V FO Pin
-0.3 ~ V CC +0.3
5
V
mA
V SC
Current-Sensing Input Voltage Applied between C SC - COM
-0.3 ~ V CC +0.3
V
Total System
Symbol
V PN(PROT)
T C
T STG
V ISO
Parameter
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
V CC = V BS = 13.5 ~ 16.5 V
T J = 125°C, Non-Repetitive, < 2 ? s
-20 ? C ?? T J ? 125 ? C, See Figure 2
60 Hz, Sinusoidal, AC 1 Minute, Connect
Rating
400
-20 ~ 100
-40 ~ 125
2500
Unit
V
°C
°C
V rms
Pins to Heat Sink Plate
Thermal Resistance
Symbol
Parameter
Condition
Min.
Typ. Max.
Unit
R th(j-c)Q
R th(j-c)F
Junction to Case Thermal
Resistance
Inverter IGBT Part (per 1 / 6 module)
Inverter FWD Part (per 1 / 6 module)
-
-
-
-
1.63
2.55
°C/W
°C/W
2nd Notes:
2. For the measurement point of case temperature(T C ), please refer to Figure 2.
?2006 Fairchild Semiconductor Corporation
FSBB20CH60 Rev. C6
5
www.fairchildsemi.com
相关PDF资料
PDF描述
4283-52 IC RF SWITCH SPDT 50 OHM SC70-6
6357-12 KIT ALLIG/BANANA PLUG PATCH 12"
SKY13352-337LF IC SWITCH DPDT 6GHZ 12QFN
IXTA70N085T MOSFET N-CH 85V 70A TO-263
5516A DMM TEST PROBE/AMPROBE PLUG SET
相关代理商/技术参数
参数描述
FSBB20CH60F 制造商:Fairchild Semiconductor Corporation 功能描述:SMART POWER MODULE ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:SMART POWER MODULE, 3-PH, 600V, 20A PCB MOUNT
FSBB20CH60L 功能描述:IGBT 模块 Smart Power Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60SL 功能描述:IGBT 模块 600V/20A Smart Power RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB3 制造商:MMD 制造商全称:MMD Components 功能描述:HC-49/US Surface Mounted Crystal
FSBB30CH60 功能描述:马达/运动/点火控制器和驱动器 600V 30A SMART RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube