参数资料
型号: FSDM311A
厂商: Fairchild Semiconductor
文件页数: 4/12页
文件大小: 0K
描述: IC FPS PWM/SENSFET 650V 8DIP
标准包装: 50
输出隔离: 隔离
频率范围: 61 ~ 73kHz
输入电压: 7 V ~ 20 V
输出电压: 650V
功率(瓦特): 13W
工作温度: 25°C ~ 150°C
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-DIP
包装: 管件
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device
reliability. The absolute maximum ratings are stress ratings only. T A =25°C, unless otherwise specified.
Symbol
V DRAIN
V STR
V DG
V GS
Drain Pin Voltage
Vstr Pin Voltage
Drain-Gate Voltage
Gate-Source Voltage
Parameter
Value
650
650
650
± 20
Unit
V
V
V
V
I DM
Drain Current Pulsed
(3)
1.5
A
Single Pulsed Avalanche Energy
I D
I D
E AS
V CC
V FB
P D
T J
T A
T STG
Continuous Drain Current (T C =25°C)
Continuous Drain Current (T C =100°C)
(4)
Supply Voltage
Feedback Voltage Range
Total Power Dissipation
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature
0.5
0.32
10
20
-0.3 to V STOP
1.40
Internally limited
-25 to +85
-55 to +150
A
A
mJ
V
V
W
°C
°C
°C
Notes:
3. Repetitive rating: Pulse width is limited by maximum junction temperature.
4. L = 24mH, starting T J = 25 ° C
Thermal Impedance
T A =25°C, unless otherwise specified.
Symbol
Parameter
Value
Unit
8DIP
θ JA
Junction-to-Ambient Thermal Impedance
(5)
88.84
°C/W
θ JC
Junction-to-Case Thermal Impedance
(6)
13.94
°C/W
Notes:
5. Free standing with no heatsink; without copper clad. (Measurement Condition – just before junction temperature
T J enters into OTP).
6. Measured on the DRAIN pin close to plastic interface.
7. All items are tested with the standards JESD 51-2 and 51-10 (DIP).
? 2007 Fairchild Semiconductor Corporation
FSDM311A ? Rev.1.0.2
4
www.fairchildsemi.com
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