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参数资料
| 型号： | FSEZ1216NY |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 12/16页 |
| 文件大小： | 0K |
| 描述： | IC PWM PRIMARY REG MOSFET 8-DIP |
| 产品变化通告： | Product Discontinuation 27/Feb/2012 |
| 标准包装： | 50 |
| 输出隔离： | 隔离 |
| 频率范围： | 39kHz ~ 45kHz |
| 输入电压： | 5.5 V ~ 25 V |
| 输出电压： | 600V |
| 功率（瓦特）： | 800mW |
| 工作温度： | -40°C ~ 105°C |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
Leading-Edge Blanking (LEB)
At the instant the MOSFET is turned on, there is a high-
current spike through the MOSFET, caused by primary-
side capacitance and secondary-side rectifier reverse
recovery. Excessive voltage across the R CS resistor can
lead to premature turn-off of MOSFET. FSEZ1216
enables and disables the switching of the MOSFET until
the fault condition is eliminated ( see Figure 30 ).
Meanwhile, OTP is latch mode protection, which is reset
when V DD is fully discharged by un-plugging the AC
power line.
employs an internal leading-edge blanking (LEB) circuit.
To inhibit the PWM comparator for a short time after the
MOSFET is turned on. External RC filtering is not required.
V DS
Power
On
Fault
Occurs
Fault Removed
Startup
Figure 29 shows the typical startup circuit and
transformer auxiliary winding for a FSEZ1216
application. Before FSEZ1216 begins switching, it
consumes only startup current (typically 10 μ A) and the
current supplied through the startup resistor charges the
V DD capacitor (C DD ). When V DD reaches turn-on voltage
of 16V (V DD-ON ), FSEZ1216 begins switching, and the
current consumed by FSEZ1216 increases to 3.5mA.
Then, the power required for FSEZ1216 is supplied from
the transformer auxiliary winding. The large hysteresis
of V DD provides more holdup time, which allows using a
small capacitor for V DD .
V DD
16V
5V
Operating Current
V D L
+
Np
3.5mA
C D L
-
R STAR T
10μA
D D D
Normal
Operation
Fault
Situation
Normal
Operation
Figure 30. Auto-Restart Operation
AC Line
C D D
N A
1
2
3
4
FSEZ1216
CS DRAIN 8
7
COMR SGND
6
COMI VDD
5
COMV VS
R S1
R S2
V DD Over-Voltage Protection (OVP)
V DD over-voltage protection prevents damage from over-
voltage conditions. If the V DD voltage exceeds 28V by
open feedback condition, OVP is triggered. The OVP
has a de-bounce time (typcal 250μs) to prevent false
trigger by switching noise. It also protects other
switching devices from over voltage.
Over-Temperature Protection (OTP)
A built-in temperature-sensing circuit shuts down PWM
output if the junction temperature exceeds 140°C.
Figure 29. Startup Circuit
Brownout Protection
FSEZ1216 detects the line voltage using auxiliary
Protections
The FSEZ1216 has several self-protective functions,
such as Over-Voltage Protection (OVP), Over-
Temperature Protection (OTP), and brownout
protection. All the protections except OTP are
implemented as auto-restart mode. Once the fault
condition occurs, switching is terminated and the
MOSFET remains off. This causes V DD to fall. When V DD
reaches the V DD turn-off voltage of 5V, the current
consumed by FSEZ1216 reduces to the startup current
(typically 10μA) and the current supplied startup resistor
charges the V DD capacitor. When V DD reaches the turn-
on voltage of 16V, FSEZ1216 resumes its normal
operation. In this manner, the auto-restart alternately
? 2009 Fairchild Semiconductor Corporation
FSEZ1216 ? Rev. 1.0.1
12
winding voltage since the auxiliary winding voltage
reflects the input voltage when the MOSFET is turned
on. The V S pin is clamped at 1.15V while the MOSFET
is turned on and brownout protection is triggered if the
current out of the VS pin is less than I VS-UVP (typical
180 μ A) during the MOSFET conduction.
Pulse-by-Pulse Current Limit
When the sensing voltage across the current sense
resistor exceeds the internal threshold of 1.4V, the
MOSFET is turned off for the remainder of switching
cycle. In normal operation, the pulse-by-pulse current
limit is not triggered since the peak current is limited by
the control loop.
www.fairchildsemi.com
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