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参数资料
| 型号： | FSEZ1216NY |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 6/16页 |
| 文件大小： | 0K |
| 描述： | IC PWM PRIMARY REG MOSFET 8-DIP |
| 产品变化通告： | Product Discontinuation 27/Feb/2012 |
| 标准包装： | 50 |
| 输出隔离： | 隔离 |
| 频率范围： | 39kHz ~ 45kHz |
| 输入电压： | 5.5 V ~ 25 V |
| 输出电压： | 600V |
| 功率（瓦特）： | 800mW |
| 工作温度： | -40°C ~ 105°C |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
Electrical Characteristics
V DD =15V and T A =25°C unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
Voltage-Error-Amplifier Section
V VR
Reference Voltage
2.475
2.500
2.525
V
V N
V G
I V-SINK
I V-SOURCE
V V-HGH
Green Mode Starting Voltage on
COMV Pin
Green Mode Ending Voltage on
COMV Pin
Output Sink Current
Output Source Current
Output High Voltage
f S =f OSC -2KHz, V VS =2.3V
f S =1KHz
V VS =3V, V COMV =2.5V
V VS =2V, V COMV =2.5V
V VS =2.3V
4.5
2.8
0.8
90
90
V
V
μ A
μ A
V
Current-Error-Amplifier Section
V IR
Reference Voltage
2.475
2.500
2.525
V
I I-SINK
I I-SOURCE
V I-HGH
Output Sink Current
Output Source Current
Output High Voltage
V CS =3V, V COMI =2.5V
V CS =0V, V COMI =2.5V
V CS =0V
4.5
55
55
μ A
μ A
V
Cable Compensation Section
V COMR
Variation Test Voltage on COMR
Pin for Cable Compensation
R COMR =100k
0.735
V
Internal MOSFET Section
DCY MAX
Maximum Duty Cycle
75
%
BV DSS
? BV DSS / ? T J
I S
I SM
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Maximum Continuous Drain-
Source Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
I D =250 μ A, V GS =0V
I D =250 μ A, Referenced to 25°C
600
0.6
1
4
V
V/°C
A
A
R DS(ON)
I DSS
Static Drain-Source On-
Resistance
Drain-Source Leakage Current
I D =0.5A, V GS =10V
V DS =600V, V GS =0V, T C =25°C
V DS =480V, V GS =0V, T C =100°C
9.3
11.5
1
10
?
μ A
t D-ON
Turn-On Delay Time
(2,3)
V DS =300V, I D =1.1A, R G =25 ?
7
24
ns
t r
t D-OFF
t f
Rise Time
Turn-Off Delay Time
Fall Time
21
13
27
52
36
64
ns
ns
ns
C ISS
C OSS
Input Capacitance
Output Capacitance
V GS =0V, V DS =25V, f S =1MHz
130
19
170
25
pF
pF
Over-Temperature-Protection Section
OTP
T OTP
Threshold Temperature for
(4)
+140
°C
Notes:
2. Pulse test: pulse width ≦ 300μs, duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
4. When over-temperature protection is activated, the power system enters latch mode and output is disabled.
? 2009 Fairchild Semiconductor Corporation
FSEZ1216 ? Rev. 1.0.1
6
www.fairchildsemi.com
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