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参数资料
| 型号： | FSQ0565RSLDTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 12/23页 |
| 文件大小： | 0K |
| 描述： | IC PWM/SENSEFET QRC TO-220F-6L |
| 标准包装： | 400 |
| 系列： | FPS™ |
| 输出隔离： | 隔离 |
| 频率范围： | 48kHz ~ 67kHz |
| 输入电压： | 9 V ~ 20 V |
| 输出电压： | 650V |
| 功率（瓦特）： | 80W |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | TO-220-6 全封装，成形引线 |
| 供应商设备封装： | TO-220-6L（成形） |
| 包装： | 管件 |
Functional Description
1. Startup: At startup, an internal high-voltage current
source supplies the internal bias and charges the
external capacitor (C a ) connected to the V CC pin, as
illustrated in Figure 23. When V CC reaches 12V, the
FPS? begins switching and the internal high-voltage
current source is disabled. The FPS? continues its
normal switching operation and the power is supplied
from the auxiliary transformer winding unless V CC goes
below the stop voltage of 8V.
V DC
C VCC
2.1 Pulse-by-Pulse Current Limit: Because current-
mode control is employed, the peak current through the
SenseFET is limited by the inverting input of PWM
comparator (V FB *), as shown in Figure 24. Assuming
that the 0.9mA current source flows only through the
internal resistor (3R + R = 2.8k), the cathode voltage of
diode D2 is about 2.5V. Since D1 is blocked when the
feedback voltage (V FB ) exceeds 2.5V, the maximum
voltage of the cathode of D2 is clamped at this voltage,
clamping V FB *. Therefore, the peak value of the current
through the SenseFET is limited.
2.2 Leading-Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, a high-current spike
usually occurs through the SenseFET, caused by
primary-side capacitance and secondary-side rectifier
3
V CC
6
V STR
reverse recovery. Excessive voltage across the R sense
resistor would lead to incorrect feedback operation in the
current-mode PWM control. To counter this effect, the
I start
FPS employs a leading-edge blanking (LEB) circuit. This
circuit inhibits the PWM comparator for a short time
8V/12V
FSQ0565 Rev.00
V cc good
V REF
Internal
Bias
(t LEB ) after the SenseFET is turned on.
3. Synchronization: The FSQ-series employs a quasi-
resonant switching technique to minimize the switching
noise and loss. The basic waveforms of the quasi-
Figure 23. Startup Circuit
2. Feedback Control: FPS employs current-mode
control, as shown in Figure 24. An opto-coupler (such as
the FOD817A) and shunt regulator (such as the KA431)
are typically used to implement the feedback network.
Comparing the feedback voltage with the voltage across
the R sense resistor makes it possible to control the
switching duty cycle. When the reference pin voltage of
resonant converter are shown in Figure 25. To minimize
the MOSFET's switching loss, the MOSFET should be
turned on when the drain voltage reaches its minimum
value, which is indirectly detected by monitoring the V CC
winding voltage, as shown in Figure 25.
V ds
V RO
the shunt regulator exceeds the internal reference
voltage of 2.5V, the opto-coupler LED current increases,
pulling down the feedback voltage and reducing the duty
cycle. This typically happens when the input voltage is
increased or the output load is decreased.
V CC
V REF
V sync
V DC
T F
V RO
V ovp (8V)
I delay
I FB
1.2V
V O
H11A817A
V FB
C B
4
D1
D2
3R
OSC
SenseFET
1.0V
230ns Delay
KA431
+
V FB *
-
R
Gate
driver
MOSFET Gate
ON
ON
FSQ0565 Rev.00
V SD
OLP
R sense
FSQ0565 Rev.00
Figure 25. Quasi-Resonant Switching Waveforms
Figure 24. Pulse-Width-Modulation (PWM) Circuit
? 2008 Fairchild Semiconductor Corporation
FSQ0565RS/RQ Rev. 1.0.3
12
www.fairchildsemi.com
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| FSQ0565RSWDTU | 功能描述:电源开关 IC - 配电 Power Switch 6-Pin 6+Tab RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| FSQ0565RWDTU | 功能描述:交流/直流开关转换器 SMPS Power switch 5A 650V RoHS:否 制造商:STMicroelectronics 输出电压:800 V 输入/电源电压（最大值）:23.5 V 输入/电源电压（最小值）:11.5 V 开关频率:115 kHz 电源电流:1.6 mA 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SSO-10 封装:Reel |
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| FSQ05A04 | 制造商:NIEC 制造商全称:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode |
| FSQ05A04B | 制造商:NIEC 制造商全称:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode |
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