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参数资料
| 型号： | FSQ0565RSLDTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/23页 |
| 文件大小： | 0K |
| 描述： | IC PWM/SENSEFET QRC TO-220F-6L |
| 标准包装： | 400 |
| 系列： | FPS™ |
| 输出隔离： | 隔离 |
| 频率范围： | 48kHz ~ 67kHz |
| 输入电压： | 9 V ~ 20 V |
| 输出电压： | 650V |
| 功率（瓦特）： | 80W |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | TO-220-6 全封装，成形引线 |
| 供应商设备封装： | TO-220-6L（成形） |
| 包装： | 管件 |
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. T A = 25°C, unless otherwise specified.
Symbol
Parameter
Min.
Max.
Unit
V str
V DS
V CC
V str Pin Voltage
Drain Pin Voltage
Supply Voltage
500
650
20
V
V
V
V FB
V Sync
I DM
I D
Feedback Voltage Range
Sync Pin Voltage
Drain Current Pulsed
Continuous Drain Current (6)
T C = 25°C
T C = 100°C
-0.3
-0.3
13.0
13.0
11
2.8
1.7
V
V
A
A
E AS
P D
T J
Single Pulsed Avalanche Energy (7)
Total Power Dissipation (T C =25°C)
Operating Junction Temperature
190
45
Internally limited
mJ
W
°C
T A
T STG
ESD
Operating Ambient Temperature
Storage Temperature
Electrostatic Discharge Capability, Human Body Model
Electrostatic Discharge Capability, Charged Device Model
-25
-55
2.0
2.0
+85
+150
°C
°C
kV
Notes:
6. Repetitive rating: pulse-width limited by maximum junction temperature.
7. L=14mH, starting T J =25°C.
Thermal Impedance
T A = 25°C unless otherwise specified.
Symbol
θ JA
θ JC
Parameter
Junction-to-Ambient Thermal Resistance (8)
Junction-to-Case Thermal Resistance (9)
Package
TO-220F-6L
Value
50
2.8
Unit
°C/W
°C/W
Notes:
8. Free standing with no heat-sink under natural convection.
9. Infinite cooling condition - refer to the SEMI G30-88.
? 2008 Fairchild Semiconductor Corporation
FSQ0565RS/RQ Rev. 1.0.3
5
www.fairchildsemi.com
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