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参数资料
| 型号： | FSQ0565RSLDTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 16/23页 |
| 文件大小： | 0K |
| 描述： | IC PWM/SENSEFET QRC TO-220F-6L |
| 标准包装： | 400 |
| 系列： | FPS™ |
| 输出隔离： | 隔离 |
| 频率范围： | 48kHz ~ 67kHz |
| 输入电压： | 9 V ~ 20 V |
| 输出电压： | 650V |
| 功率（瓦特）： | 80W |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | TO-220-6 全封装，成形引线 |
| 供应商设备封装： | TO-220-6L（成形） |
| 包装： | 管件 |
7. Switching Frequency Limit: To minimize switching
loss and Electromagnetic Interference (EMI), the
MOSFET turns on when the drain voltage reaches its
minimum value in quasi-resonant operation. However,
this causes switching frequency to increases at light load
conditions. As the load decreases or input voltage
increases, the peak drain current diminishes and the
switching frequency increases. This results in severe
switching losses at light-load condition, as well as
intermittent switching and audible noise. These problems
create limitations for the quasi-resonant converter
topology in a wide range of applications.
t smax =21 μ s
To overcome these problems, FSQ-series employs a
frequency-limit function, as shown in Figures 35 and 36.
Once the SenseFET is turned on, the next turn-on is
prohibited during the blanking time (t B ). After the
blanking time, the controller finds the valley within the
detection time window (t W ) and turns on the MOSFET, as
shown in Figures 35 and Figure 36 (Cases A, B, and C).
If no valley is found during t W , the internal SenseFET is
forced to turn on at the end of t W (Case D). Therefore,
the devices have a minimum switching frequency of
48kHz and a maximum switching frequency of 67kHz.
8. AVS (Alternating Valley Switching): Due to the
quasi-resonant operation with limited frequency, the
I DS
I DS
switching frequency varies depending on input voltage,
load transition, and so on. At high input voltage, the
switching on time is relatively small compared to low
t B =15 μ s
I DS
t s
V DS
I DS
A
input voltage. The input voltage variance is small and the
switching frequency modulation width becomes small. To
improve the EMI performance, AVS is enabled when
input voltage is high and the switching on time is small.
Internally, quasi-resonant operation is divided into two
categories; one is first-valley switching and the other is
t B =15 μ s
t s
V DS
B
second-valley switching after blanking time. In AVS, two
successive occurrences of first-valley switching and the
other two successive occurrences of second-valley
switching is alternatively selected to maximize frequency
modulation. As depicted in Figure 36, the switching
frequency hops when the input voltage is high. The
internal timing diagram of AVS is described in Figure 37.
I DS
I DS
t B =15 μ s
I DS
t s
V DS
I DS
C
f s
67kHz
59kHz
53kHz
48kHz
Constant
frequency
CCM
Assume the resonant period is 2 us
AVS trigger point
Variable frequency within limited range
DCM
AVS region
1
15 μ s
1
17 μ s
1
19 μ s
1
21 μ s
V DS
t B =15 μ s
t W =6 μ s
D
D
C
B
A
FSQ0565 Rev.00
V IN
t smax =21 μ s
FSQ0565 Rev. 00
Figure 35. QRC Operation with Limited Frequency
? 2008 Fairchild Semiconductor Corporation
FSQ0565RS/RQ Rev. 1.0.3
16
Figure 36. Switching Frequency Range
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FSQ0565RSWDTU | 功能描述:电源开关 IC - 配电 Power Switch 6-Pin 6+Tab RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| FSQ0565RWDTU | 功能描述:交流/直流开关转换器 SMPS Power switch 5A 650V RoHS:否 制造商:STMicroelectronics 输出电压:800 V 输入/电源电压（最大值）:23.5 V 输入/电源电压（最小值）:11.5 V 开关频率:115 kHz 电源电流:1.6 mA 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SSO-10 封装:Reel |
| FSQ05A03L | 制造商:NIEC 制造商全称:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode |
| FSQ05A04 | 制造商:NIEC 制造商全称:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode |
| FSQ05A04B | 制造商:NIEC 制造商全称:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode |
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