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| 型号： | FSQ211 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/13页 |
| 文件大小： | 0K |
| 描述： | IC FPS PWM/SENSFET 650V 8DIP |
| 标准包装： | 50 |
| 输出隔离： | 隔离 |
| 频率范围： | 61 ~ 73kHz |
| 输入电压： | 8 V ~ 20 V |
| 输出电压： | 650V |
| 功率（瓦特）： | 1.4W |
| 工作温度： | 25°C ~ 145°C |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
| 产品目录页面： | 1219 (CN2011-ZH PDF) |
Pin Assignments
GND
Vcc
Vfb
NC
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Vstr
Pin Definitions
Figure 3.
Pin Configuration (Top View)
Pin
1
2
3
4
5
6,7,8
Name
GND
V CC
V FB
NC
Vstr
Drain
Description
Ground. SenseFET source terminal on primary side and internal control ground.
Positive supply voltage input . Although connected to an auxiliary transformer winding,
current is supplied from pin 5 (Vstr) via an internal switch during startup ( see Block Diagram ). It
is not until V CC reaches the UVLO upper threshold (9V), that the internal start-up switch opens
and device power is supplied via the auxiliary transformer winding.
Feedback . Inverts input to the PWM comparator with its normal input level between 0.5V and
2.5V. It has a 0.4mA current source connected internally, while a capacitor and opto-coupler
are typically connected externally. A feedback voltage of 4.5V triggers overload protection
(OLP). There is a time delay while charging external capacitor C FB from 3V to 4.5V using an
internal 5μA current source. This time delay prevents false triggering under transient
conditions, but allows the protection mechanism to operate under true overload conditions.
No Connection .
Start-up . This pin connects directly to the rectified AC line voltage source. At start-up, the
internal switch supplies internal bias and charges an external storage capacitor placed
between the V CC pin and ground. Once the V CC reaches 9V, the internal switch stops charging
the capacitor.
SenseFET Drain . The drain pins are designed to connect directly to the primary lead of the
transformer and are capable of switching a maximum of 650V. Minimizing the length of the
trace connecting these pins to the transformer decreases leakage inductance.
? 2007 Fairchild Semiconductor Corporation
FSQ211 Rev. 1.0.0
3
www.fairchildsemi.com
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