参数资料
型号: FSQ211
厂商: Fairchild Semiconductor
文件页数: 4/13页
文件大小: 0K
描述: IC FPS PWM/SENSFET 650V 8DIP
标准包装: 50
输出隔离: 隔离
频率范围: 61 ~ 73kHz
输入电压: 8 V ~ 20 V
输出电压: 650V
功率(瓦特): 1.4W
工作温度: 25°C ~ 145°C
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-DIP
包装: 管件
产品目录页面: 1219 (CN2011-ZH PDF)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. T A =25°C unless otherwise specified.
Symbol
V DRAIN
V STR
V DG
V GS
V CC
V FB
P D
T J
T A
T STG
Parameter
Drain Pin Voltage
Vstr Pin Voltage
Drain-Gate Voltage
Gate-Source Voltage
Supply Voltage
Feedback Voltage Range
Total Power Dissipation
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature
Value
650
650
650
± 20
20
-0.3 to V STOP
1.40
Internally limited
-25 to +85
-55 to +150
Unit
V
V
V
V
V
V
W
°C
°C
°C
Notes:
1. Repetitive rating: Pulse width is limited by maximum junction temperature.
2. L = 24mH, starting T J = 25 ° C.
Thermal Impedance
T A =25°C unless otherwise specified.
Symbol
Parameter
Value
Unit
8DIP
Junction-to-Ambient Thermal Impedance
θ JA
(3)
89
°C/W
θ JC
Junction-to-Case Thermal Impedance
(4)
14
°C/W
Notes:
3. Free standing with no heatsink; without copper clad. Measurement condition – Just before junction temperature
T J enters into OTP.
4. Measured on the DRAIN pin close to plastic interface.
5. All items are tested with the JEDEC standards: JESD 51-2 and 51-10 (DIP).
? 2007 Fairchild Semiconductor Corporation
FSQ211 Rev. 1.0.0
4
www.fairchildsemi.com
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