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参数资料
| 型号： | FSR510R09GZ |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING CONTROLLER, ZFM6 |
| 封装： | ROHS COMPLIANT, TO-220, 6 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 0K |
| 代理商： | FSR510R09GZ |
2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FSR510 Rev. 1.0.4
6
FSR510
—
Highly
Integrated
Synchronous
Rectificati
on
Combination
Controller
Electrical Characteristics
VDD=15V and TA=25°C, unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
RES Section
VRES-EN
The Threshold Voltage of VRES
to enable SR MOS
0.5
V
tRES-LOW
The Debounce Time for
Disable RES Function
50
s
VRES
Linear Operation Range of
RES Pin Voltage
VDD>5V
0.8
4.4
V
RatioRES
VRES Transfer Ratio to IRES
0.9
1.0
1.1
A/V
RatioLPC-RES
Ratio between LPC and RES
Pin
4.75
5.00
5.25
Green Mode Section
tGREEN-OFF
Discharge Time tDISCHR to
Leave Green-Mode
5.1
5.8
6.5
s
tGREEN-ON
Discharge Time tDISCHR to
Enter Green-Mode
4.3
4.8
5.3
s
tGREEN-TIME
Cycle Time to Enter/Leaving
Green-Mode
(2)
9
times
MOSFET Section
BVDSS
Drain-Source Breakdown
Voltage
IDET=250A, VDD=0V,
TC=25°C
100
V
Δ
BVDSS /ΔTJ Breakdown Voltage
Temperature Coefficient
IDET=250A,
Referenced to 25°C
0.1
V/°C
RDS(ON)
Static Drain-Source
On-Resistance
VDD=15V, IDET=75A
7.2
9.0
m
Ω
VDET-GND=100V,
VDD=0V
1
IDSS
Drain-Source Leakage
Current
VDET-GND=100V,
VDD=0V, TC=150°C
500
μA
tD-ON
Turn-On Delay Time
107
224
tR
Turn-On Rise Time
322
655
tD-OFF
Turn-Off Delay Time
VDET-GND=50V, ID=75A
VDD=10V
(3,4)
166
342
tF
Turn-Off Fall Time
149
309
ns
Notes:
2.
Guaranteed by design.
3.
Pulse test: pulse width≦300μs, duty cycle≦2%.
4.
Essentially independent of operating temperature typical characteristics.
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