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参数资料
型号： G2SB20
厂商： Vaishali Semiconductor
英文描述： Glass Passivated Single-Phase Bridge Rectifier
中文描述： 玻璃钝化单相桥式整流器
文件页数： 1/3页
文件大小： 27K
代理商： G2SB20
G2SB20 thru G2SB80
Vishay Semiconductors
formerly General Semiconductor
Document Number 88603
www.vishay.com
21-Mar-02
1
New Product
Glass Passivated Single-Phase
Bridge Rectifier
Reverse Voltage 200 to 800V
Forward Current 1.5A
0.125 (3.17)
x 45 degrees
Chamfer
0.080 (2.03)
0.060 (1.50)
0.095 (2.41)
0.080 (2.03)
0.825 (20.9)
0.815 (20.7)
0.043 (1.1)
0.035 (0.9)
Polarity shown on front side of case, positive lead beveled corner.
0.040 (1.02)
0.030 (0.76)
0.022 (0.56)
0.018 (0.46)
0.210
0.190
(5.3)
(4.8)
0.421 (10.7)
0.411 (10.4)
0.718 (18.2)
0.682 (17.3)
0.140 (3.56)
0.128 (3.25)
Lead Depth
0.098 (2.5)
0.075 (1.9)
0.098 (2.5)
0.075 (1.9)
0.022 (0.56)
0.018 (0.46)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
G2SB20
G2SB60
G2SB80
Unit
Maximum repetitive peak reverse voltage
VRRM
200
600
800
V
Maximum RMS voltage
VRMS
140
420
560
V
Maximum DC blocking voltage
VDC
200
600
800
V
Maximum average forward
IF(AV)
1.5
A
rectified output current at TA = 25°C
Peak forward surge current single
IFSM
80
A
sine-wave superimposed on rated load (JEDEC Method)
Rating for fusing (t<8.3ms)
I2t27
A2sec
Typical thermal resistance per leg
R
θJA
40
R
θJL
12
°C/W
Operating junction storage and temperature range
TJ, TSTG
–55 to +150
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
G2SB20
G2SB60
G2SB80
Unit
Maximum instantaneous forward voltage
drop per leg at 0.75 A
VF
1.00
V
Maximum DC reverse current at rated
TA = 25°C
5.0
DC blocking voltage per leg
TA =125°C
IR
300
A
Note: (1) Unit mounted on P.C.B. with 0.5 x 0.5" (12 x 12mm) copper pads and 0.375” (9.5mm) lead length
Dimensions in inches and (millimeters)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
This series is UL listed under the Recognized
Component Index, file number E54214
High case dielectric strength
Ideal for printed circuit boards
Glass passivated chip junction
High surge current capability
High temperature soldering guaranteed:
260°C/10 seconds, 0.375 (9.5mm) lead length,
5lbs. (2.3kg) tension
Mechanical Data
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight: 0.071 oz., 2.0 g
Packaging codes/options:
1/400 EA. per Bulk Tray Stack, 4K/box
Case Type GBL
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相关代理商/技术参数
参数描述
G2SB20-BP 功能描述:桥式整流器 200V 1.5A RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube
G2SB20-E3/45 功能描述:桥式整流器 1.5 Amp 200 Volt Glass Passivated RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube
G2SB20-E3/51 功能描述:桥式整流器 200 Volt 1.5 Amp Glass Passivated RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube
G2SB40 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 1.5A
G2SB460-E 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 600V to 800V Current:4.0A
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