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参数资料
| 型号： | GCU08BA-130 |
| 厂商： | Powerex Power Semiconductors |
| 英文描述： | GCT THYRISTOR UNIT HIGH POWER INVERTER USE PRESS PACK TYPE |
| 中文描述： | GCT公司机组大功率晶闸管逆变器使用的新闻包装型 |
| 文件页数： | 2/7页 |
| 文件大小： | 82K |
| 代理商： | GCU08BA-130 |
Mar. 2001
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Reverse recovery charge
Reverse recovery energy
Gate trigger current
Gate trigger voltage
Thermal resistance
—
Delay time
VTM
IRRM
IDRM
IGRM
QRR
Erec
IGT
VGT
Rth(j-f)
Eon
—
Turn-off switching energy
tgt
ts
Turn-on switching energy
Unit
Symbol
VRRM
VRSM
VDRM
VDSM
VLTDS
Parameter
V
Voltage class
6500
3600
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Long term DC stability voltage
MAXIMUM RATINGS
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT
GCU08AA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
GCT PART (Type name : FGC800A-130DS)
Conditions
—
VGK = –2V
VGK = –2V,
λ = 100 Fit
520
330
4.8
9.6
× 104
10
21
500
800
5
17
100
120
–20 ~ +115
–20 ~ +150
11.1 ~ 15.8
530
VDM = 3/4 VDRM, VD = 3000V, LC = 0.3
H, VRG = 20V
Tj = 25/115
°C, With GU-D08
(see Fig. 1, 3)
Applied for all conduction angles
f = 60Hz, sinewave
θ = 180°, Tf = 55°C
VD = 3000V, IT = 800A, CS= 0.1
F, RS= 10
Tj = 25/115
°C, f = 60Hz, With GU-D08 (see Fig. 1,2 )
(Recommended value 13kN)
Typical value
One half cycle at 60Hz, Tj = 115
°C Start
Ratings
A
kA
A2s
V
A
kW
W
°C
kN
g
RMS on-state current
Average on-state current
Surge on-state current
Current-squared, time integration
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
IT(RMS)
IT(AV)
ITSM
I2t
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
Symbol
Parameter
Conditions
ITQRM
Repetitive controllable on-state current
800
Unit
A
diT/dt
Critical rate of rise of on-state current
1000
A/
s
V
mA
C
J/P
A
V
°C/W
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Limits
Min
Typ
Max
Unit
DC METHOD : VD = 24V, RL = 0.1
, Tj = 25°C
dv/dt
Critical rate of rise of off-state voltage
Turn-on time
Eoff
Storage time
3000
—
6.8
150
100
50
1650
5.0
0.5
1.5
0.025
—
5.0
1.6
3.0
6.0
V/
s
J/P
s
J/P
IT = 800A, Tj = 115
°C
VRM = 6500V, Tj = 115
°C
VDM = 6500V, VGK = –2V, Tj = 115
°C
VRG = 21V, Tj = 115
°C
VD = 3000V, VGK = –2V, Tj = 115
°C
(Expo. wave)
(see Fig. 4)
IT = 800A, VD = 3000V, di/dt = 1000A/
s, Tj = 115°C
CS= 0.1
F, RS = 10
With GU-D08
(see Fig. 1, 2)
IT = 800A, VDM = 3/4 VDRM, VD = 3000V
CS= 0.1
F, RS= 10, VRG = 20V, Tj = 115°C
With GU-D08
(see Fig. 1, 5)
VR = 3000V, IT = 800A, di/dt = 1000A/
s
CS= 0.1
F, RS = 10, Tj = 115°C
(see Fig. 5, 6)
Junction to fin
td
—
1.0
s
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