参数资料
型号: GCU08BA-130
厂商: Powerex Power Semiconductors
英文描述: GCT THYRISTOR UNIT HIGH POWER INVERTER USE PRESS PACK TYPE
中文描述: GCT公司机组大功率晶闸管逆变器使用的新闻包装型
文件页数: 7/7页
文件大小: 82K
代理商: GCU08BA-130
Mar. 2001
PERFORMANCE CURVES
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT
GCU08AA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
0
0.03
0.035
0.02
0.025
0.01
0.015
0.005
0.001
0.01
0.1
1
10
5
3
10
0123
45
67
8
2
7
5
3
2
7
5
3
2
7
9
8
7
0
6
5
4
3
2
1
100 200 300 400 500 600 700 800 9001000
2.5
1000
0
2.0
1.5
1.0
0.5
0.0
900
800
700
600
500
400
300
200
100
Tj=25
°C
Tj=115
°C
104
102
103
Max
Typ
Max
REVERSE
RECOVERY
ENERGY
E
rec
(J/P)
ON-STATE CURRENT IT (A)
Erec VS IT
8
7
0
6
5
4
3
2
1
100 200 300 400 500 600 700 800 9001000
Typ
Max
Condition
VR=3000V, Tj=115
°C
di/dt=1000A/
s
Cs=0.1
F, Rs=10
REVERSE
RECOVERY
CHARGE
Q
RR
(
C) 2500
2000
1500
1000
500
0
0 100 200 300 400 500 600 700 800 9001000
Typ
Max
Condition
VR=3000V, Tj=115
°C
di/dt=1000A/
s
Cs=0.1
F, Rs=10
GCT1:Turn-off test
GCT2:Recovery test
Turn-off and
Recovery test circuit
Cs
GCT2
GCT1
Rs
Cs
Rs
L(load)
L(line)
VD
GCT1:Turn-off test
GCT2:Recovery test
Turn-off and
Recovery test circuit
Cs
GCT2
GCT1
Rs
Cs
Rs
L(load)
L(line)
VD
MAXIMUM ON-STATE CHARACTERISTIC
ON-STATE
CURRENT
( A
)
ON-STATE VOLTAGE (V)
TURN
ON
SWITCHING
ENERGY
E
on
(J/P)
TURN ON CURRENT IT (A)
Eon VS IT
Condition
VD=3000V, Tj=115
°C
di/dt=1000A/
s
Cs=0.1
F, Rs=10
With GU-D08
Condition
VD=3000V, VDM=VD+2.34
IT
Tj=115
°C, With GU-D08
Cs=0.1
F, Rs=10
TURN
OFF
SWITCHING
ENERGY
E
off
(J/P)
TURN OFF CURRENT IT (A)
Eoff VS IT
ON-STATE CURRENT IT (A)
QRR VS IT
GCT1:Turn-off test
GCT2:Recovery test
Turn-off and
Recovery test circuit
Cs
GCT2
GCT1
Rs
Cs
Rs
L(load)
L(line)
VD
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
THERMAL
IMPEDANCE
Zth(
°C/W)
TIME (S)
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