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参数资料
| 型号： | GMBT8550L |
| 厂商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL TRANSISTOR |
| 中文描述： | 进步党外延晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 236K |
| 代理商： | GMBT8550L |
1/2
ISSUED DATE :2004/08/27
REVISED DATE :
G
G M
M B
B T
T 88555500L
L
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A LL T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMBT8550L(large current) is designed for general purpose amplifier applications.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
0 C
10 C
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-25
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current
IC
1.5
A
Total Power Dissipation
PD
250
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
V
IC=-100uA
BVCEO
-25
-
V
IC=-2mA
BVEBO
-6
-
V
IE=-100uA
ICBO
-
-100
nA
VCB=-35V, IE=0
IEBO
-100
nA
VEB=-6V,IC=0
VCE(sat)
-
-0.5
V
IC=-800mA, IB=-80mA
VBE(sat)
-
-1.2
V
IC=-800mA, IB=-80mA
VBE(on)
-
-1
V
VCE=-1V,IC=-10mA
hFE
45
-
VCE=-1V, IC=-5mA
hFE
120
-
500
VCE=-1V, IC=-100mA
hFE
40
-
VCE=-1V, IC=-800mA
fT
100
-
MHz
VCE=-10V, IC=-20mA, f=100MHz
Cob
-
10
pF
VCB=-10V, f=1MHz
Classification Of hFE
Rank
BLC
BLD
BLE
hFE
120 - 200
160 - 300
250 - 500
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