参数资料
型号: GP2S700HCP
厂商: Sharp Microelectronics
文件页数: 6/13页
文件大小: 0K
描述: PHOTOINTERRUPTER REFLEC 3MM SMD
产品变化通告: Internal Chip Change 04/May/2007
标准包装: 1
检测距离: 0.217"(5.5mm)
检测方法: 反射
电压 - 集电极发射极击穿(最大): 35V
电流 - 集电极 (Ic)(最大): 20mA
电流 - DC 正向(If): 50mA
输出类型: 光电晶体管
响应时间: 20µs
安装类型: 表面贴装
封装/外壳: 4-SMD
包装: 标准包装
工作温度: -25°C ~ 85°C
产品目录页面: 2776 (CN2011-ZH PDF)
其它名称: 425-1913-6
GP2S700HCP
■ Design Considerations
● Design guide
1) Regarding to prevation of malfunction
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face
to the external light. Also, if some other electronic components are located close to this device, false
operation may occur.
(The light reflection caused by the other components may slip into the photodetecting portion of the
device and if may cause false operation.)
2) Distance characteristic
The distance between the photointerrupter and the object to be detected shall be determined the distance
by referencing Fig.8 "Relative collector current vs. distance".
3) For wiring on a mounting PCB
To avoid possibility for short, please do not apply pattern wiring on the back side of the device.
4) Regarding to mounting this product
There is a possibility that the opaque molded resin portion may have a crack by force at mounting etc.
Please use this product after well con ? rmation of conditions in your production line.
And please con ? rm the mounting workability beforehand when using the automatic mounting machine.
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Parts
This product is assembled using the below parts.
? Light detector (qty. : 1)
Category
Phototransister
Material
Silicon (Si)
Maximum Sensitivity
wavelength (nm)
930
Sensitivity
wavelength (nm)
700 to 1 200
Response time ( μ s)
20
? Light emitter (qty. : 1)
Category
Infrared light emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
Maximum light emitting
wavelength (nm)
950
I/O Frequency (MHz)
0.3
? Material
Case
Black epoxy resin
PCB
Glass epoxy resin
6
Lead frame plating
Au plating
Sheet No.: D3-A02201EN
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