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参数资料
| 型号： | GP4501 |
| 厂商： | GTM CORPORATION |
| 元件分类： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 2/9页 |
| 文件大小： | 438K |
| 代理商： | GP4501 |
GP4501
Page: 2/9
ISSUED DATE :2006/12/06
REVISED DATE :
N-Channel Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.02
-
V/ :
Reference to 25 , I
:
D=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
13
-
S
VDS=10V, ID=7A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
:
-
1
uA
VDS=30V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
25
uA
VDS=24V, VGS=0
-
28
VGS=10V, ID=7A
Static Drain-Source On-Resistance2
RDS(ON)
-
42
m
VGS=4.5V, ID=5A
Total Gate Charge2
Qg
-
8.4
-
Gate-Source Charge
Qgs
-
2.1
-
Gate-Drain (“Miller”) Change
Qgd
-
4.7
-
nC
ID=7A
VDS=24V
VGS=4.5V
Turn-on Delay Time2
Td(on)
-
6
-
Rise Time
Tr
-
5.2
-
Turn-off Delay Time
Td(off)
-
18.8
-
Fall Time
Tf
-
4.4
-
ns
VDS=15V
ID=1A
VGS=10V
RG=3.3
RD=15
Input Capacitance
Ciss
-
645
-
Output Capacitance
Coss
-
150
-
Reverse Transfer Capacitance
Crss
-
95
-
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.2
V
IS=7A, VGS=0V, Tj=25 :
Continuous Source Current (Body Diode)
IS
-
1.67
A
VD=VG=0V, VS=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90 : /W when mounted on Min. copper pad.
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