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参数资料
| 型号： | GP4501 |
| 厂商： | GTM CORPORATION |
| 元件分类： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 9/9页 |
| 文件大小： | 438K |
| 代理商： | GP4501 |
GP4501
Page: 9/9
ISSUED DATE :2006/12/06
REVISED DATE :
P-Channel
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
相关PDF资料 |
PDF描述 |
|---|---|
| GP4558 | DUAL OPERATIONAL AMPLIFIER |
| GP4565 | 30V N-Channel PowerTrench MOSFET |
| GP4953 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GP5936 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GP600 | 6 AMP GENERAL PURPOSE SILICON DIODES |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GP450DKN5B | 制造商:GP BATTERIES 功能描述:BATTERY PACK 5XD 6V TAGGED |
| GP450DKNHB | 制造商:GP BATTERIES 功能描述:BATTERY D 1.2V TAGGED |
| GP450DKT2A4B | 制造商:GP BATTERIES 功能描述:BATTERY PACK 2D 2.4V HIGH TEMP |
| GP450DKT3AHB | 制造商:GP BATTERIES 功能描述:BATTERY PACK 3D 3.6V HIGH TEMP |
| GP450DKT4 | 制造商:GP BATTERIES 功能描述:BATTERY PACK 4XD |
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