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参数资料
| 型号： | GS8160F18 |
| 厂商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（1M x 18Bit）Sync Burst SRAM(16M位（1M x 18位）同步静态RAM(带2位脉冲地址计数器)) |
| 中文描述： | 16Mb的（100万x 18位）同步突发静态存储器（1,600位（100万× 18位）同步静态随机存储器（带2位脉冲地址计数器）） |
| 文件页数： | 10/23页 |
| 文件大小： | 457K |
| 代理商： | GS8160F18 |
Rev: 2.06 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
10/23
1999, Giga Semiconductor, Inc.
Preliminary
GS8160F18/32/36T-7/8/8.5/10/11
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
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| GS8160F32 | 16Mb（512K x 36Bit）Sync Burst SRAM(16M位（512K x 36位）同步静态RAM(带2位脉冲地址计数器)) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8160F18BGT-5.5 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160F18BGT-5.5I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160F18BGT-5.5IV | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160F18BGT-5.5V | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160F18BGT-6.5 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS 100TQFP - Trays |
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