参数资料
型号: GS8160F18
厂商: GSI TECHNOLOGY
英文描述: 16Mb(1M x 18Bit)Sync Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器))
中文描述: 16Mb的(100万x 18位)同步突发静态存储器(1,600位(100万× 18位)同步静态随机存储器(带2位脉冲地址计数器))
文件页数: 12/23页
文件大小: 457K
代理商: GS8160F18
Rev: 2.06 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
12/23
1999, Giga Semiconductor, Inc.
Preliminary
GS8160F18/32/36T-7/8/8.5/10/11
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 2.5 V)
Note: These parameters are sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
2.
3.
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
R
Θ
JA
R
Θ
JA
R
Θ
JC
Max
Unit
°
C/W
°
C/W
°
C/W
Notes
Junction to Ambient (at 200 lfm)
single
40
1,2
Junction to Ambient (at 200 lfm)
four
24
1,2
Junction to Case (TOP)
9
3
20% tKC
V
SS
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
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