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参数资料
| 型号： | GS8160F18 |
| 厂商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（1M x 18Bit）Sync Burst SRAM(16M位（1M x 18位）同步静态RAM(带2位脉冲地址计数器)) |
| 中文描述： | 16Mb的（100万x 18位）同步突发静态存储器（1,600位（100万× 18位）同步静态随机存储器（带2位脉冲地址计数器）） |
| 文件页数： | 9/23页 |
| 文件大小： | 457K |
| 代理商： | GS8160F18 |
Rev: 2.06 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
9/23
1999, Giga Semiconductor, Inc.
Preliminary
GS8160F18/32/36T-7/8/8.5/10/11
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW)
control inputs and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
3.
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| GS8160F32 | 16Mb（512K x 36Bit）Sync Burst SRAM(16M位（512K x 36位）同步静态RAM(带2位脉冲地址计数器)) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8160F18BGT-5.5 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160F18BGT-5.5I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160F18BGT-5.5IV | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160F18BGT-5.5V | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160F18BGT-6.5 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS 100TQFP - Trays |
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