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参数资料
| 型号： | GS8662QT10BGD-250T |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | SRAM |
| 英文描述： | 8M X 9 QDR SRAM, 0.45 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件页数： | 3/29页 |
| 文件大小： | 303K |
| 代理商： | GS8662QT10BGD-250T |
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GS8662QT07/10/19/37BD-357/333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 5/2011
11/29
2011, GSI Technology
State Diagram
Power-Up
Read NOP
Load New
Read Address
DDR Read
Write NOP
Load New
Write Address
DDR Write
WRITE
READ
WRITE
READ
WRITE
Always
(Fixed)
Always
(Fixed)
READ
WRITE
Notes:
1. Internal burst counter is fixed as 1-bit linear (i.e., when first address is A0+), next internal burst address is A0+1.
2. “READ” refers to read active status with R = Low, “READ” refers to read inactive status with R = High. The same is
true for “WRITE” and “WRITE”.
3. Read and write state machine can be active simultaneously.
4. State machine control timing sequence is controlled by K.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8662R08BD-167 | 制造商:GSI Technology 功能描述:GS8662R08BD-167 - Trays |
| GS8662R08BD-200 | 制造商:GSI Technology 功能描述:GS8662R08BD-200 - Trays |
| GS8662R08BD-200I | 制造商:GSI Technology 功能描述:GS8662R08BD-200I - Trays |
| GS8662R08E | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R08E-167 | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
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