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参数资料
| 型号： | GS8662T06BD-350I |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | SRAM |
| 英文描述： | 8M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1 MM PITCH, FPBGA-165 |
| 文件页数： | 11/33页 |
| 文件大小： | 651K |
| 代理商： | GS8662T06BD-350I |
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Operating Currents (x8/x9)
Parameter
Symbol
Test Conditions
-500
-450
-400
-350
Notes
0°
to
70°C
–40°
to
85°C
0°
to
70°C
–40°
to
85°C
0°
to
70°C
–40°
to
85°C
0°
to
70°C
–40°
to
85°C
Operating
Current (x8):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
760
770
695
705
625
635
590
600
2, 3
Operating
Current (x9):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
760
770
695
705
625
635
590
600
2, 3
Standby
Current (NOP):
DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs
≤ 0.2 V
or
≥ VDD – 0.2 V
260
270
250
260
235
245
230
240
2, 4
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, IOUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 3/2011
19/33
2011, GSI Technology
GS8662T20/38BD-550/500/450/400/350
GS8662T06/11BD-500/450/400/350
相关PDF资料 |
PDF描述 |
|---|---|
| GS8662T06BD-350T | 8M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| GS8672Q38BE-500I | 2M X 36 QDR SRAM, 0.45 ns, PBGA165 |
| GS880F32AGT-5.5IT | 256K X 32 CACHE SRAM, 5.5 ns, PQFP100 |
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| GSAA07C-Q01 | SNAP ACTING/LIMIT SWITCH, SPDT, MOMENTARY, 0.1A, 50VDC, PANEL MOUNT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8662T06BD-450 | 制造商:GSI Technology 功能描述:GS8662T06BD-450 - Trays |
| GS8662T06BD-500 | 制造商:GSI Technology 功能描述:GS8662T06BD-500 - Trays |
| GS8662T06BD-550 | 制造商:GSI Technology 功能描述:GS8662T06BD-550 - Trays |
| GS8662T07BD-450 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS8662T08BD-400 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
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