参数资料
型号: GS88237BGB-200V
厂商: GSI TECHNOLOGY
元件分类: SRAM
英文描述: 256K x 36 9Mb SCD/DCD Sync Burst SRAM
中文描述: 256K X 36 CACHE SRAM, 2.5 ns, PBGA119
封装: ROHS COMPLIANT, FPBGA-119
文件页数: 28/28页
文件大小: 925K
代理商: GS88237BGB-200V
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
WR
X
Simple
Syn
chronous
Operation
Simple
Burst
Synch
ronous
Operation
CR
R
CW
CR
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
GS88237BB/D-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 12/2008
9/28
2003, GSI Technology
Simplified State Diagram
相关PDF资料
PDF描述
GS88237BGB-250IV 256K x 36 9Mb SCD/DCD Sync Burst SRAM
GS88237BGB-250V 256K x 36 9Mb SCD/DCD Sync Burst SRAM
GS88237BGD-200IV 256K x 36 9Mb SCD/DCD Sync Burst SRAM
GS88237BGD-200V 256K x 36 9Mb SCD/DCD Sync Burst SRAM
GS88237BGD-250IV 256K x 36 9Mb SCD/DCD Sync Burst SRAM
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GS88237CB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays
GS88237CB-200V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays
GS88237CB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.3NS 119FPBGA - Trays