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参数资料
| 型号： | GSS4913 |
| 厂商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P沟道增强型功率MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 312K |
| 代理商： | GSS4913 |
GSS4913
Page: 2/4
ISSUED DATE :2006/08/31
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.028
-
V/ :
Reference to 25 :
, ID=-250uA
Gate Threshold Voltage
VGS(th)
-0.4
-
-1.0
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
6.5
-
S
VDS=-5V, ID=-3.5A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±8V
Drain-Source Leakage Current(Tj=25 : )
-
-1
uA
VDS=-16V, VGS=0
Drain-Source Leakage Current(Tj=70 : )
IDSS
-
-25
uA
VDS=-12V, VGS=0
-
130
VGS=-4.5V, ID=-3.5A
Static Drain-Source On-Resistance
RDS(ON)
-
180
m
VGS=-2.5V, ID=-3.0A
Total Gate Charge2
Qg
-
6
8.5
Gate-Source Charge
Qgs
-
0.8
-
Gate-Drain (“Miller”) Change
Qgd
-
1.3
-
nC
ID=-3.5A
VDS=-5V
VGS=-4.5V
Turn-on Delay Time2
Td(on)
-
6.5
-
Rise Time
Tr
-
20
-
Turn-off Delay Time
Td(off)
-
31
-
Fall Time
Tf
-
21
-
ns
VDD=-5V
ID=-1A
VGS=-4.5V
RG=6
Input Capacitance
Ciss
-
405
-
Output Capacitance
Coss
-
170
-
Reverse Transfer Capacitance
Crss
-
45
-
pF
VGS=0V
VDS=-10V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.2
V
IS=-2.1A, VGS=0V
Continuous Source Current (Body Diode)
IS
-
-2.1
A
VD=VG=0V, VS=-1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
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| GSS4920 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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