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| 型号： | GSS4913 |
| 厂商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P沟道增强型功率MOSFET |
| 文件页数： | 4/4页 |
| 文件大小： | 312K |
| 代理商： | GSS4913 |
GSS4913
Page: 4/4
ISSUED DATE :2006/08/31
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse Maximum
Power Dissipation
v.s. Junction Temperature
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Transient Thermal Response Curve
0.0001
0.001
0.01
0.1
1
10
100
300
相关PDF资料 |
PDF描述 |
|---|---|
| GSS4920 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4924 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4936 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4953BDY | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4953 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GSS4920 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4924 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4936 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4953 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4953BDY | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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