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参数资料
| 型号： | GSS4936 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 1/5页 |
| 文件大小： | 324K |
| 代理商： | GSS4936 |
GSS4936
Page: 1/5
ISSUED DATE :2005/10/31
REVISED DATE :
G
G S
S S
S 44993366
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSS4936 provide the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0°
8°
J
0.375 REF.
E
0.40
0.90
K
45°
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
25
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current3
ID @TA=25 :
5.8
A
Continuous Drain Current3
ID @TA=70 :
4.6
A
Pulsed Drain Current1
IDM
30
A
Total Power Dissipation
PD @TA=25 :
2
W
Linear Derating Factor
0.016
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-amb
62.5
/
: W
BVDSS
25V
RDS(ON)
37m
ID
5.8A
Pb Free Plating Product
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相关代理商/技术参数 |
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|---|---|
| GSS4953 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4953BDY | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4955 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4957 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS5 | 制造商:HellermannTyton 功能描述:SLEEVING HELAGLASS 5MM 25M 制造商:HELLERMANN TYTON 功能描述:SLEEVING, HELAGLASS, 5MM, 25M; Sleeving / Tubing Type:Braided; Sleeving Material:Fibre Reinforced Silicone; Internal Diameter:5mm; Sleeving Colour:White; SVHC:No SVHC (19-Dec-2012); Accessory Type:Sleeving; Body Material:Fibre ;RoHS Compliant: Yes 制造商:HellermannTyton 功能描述:HELAGLASS 5.0MM BRD SLV WHITE |
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