参数资料
型号: GSS4936
厂商: GTM CORPORATION
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N沟道增强型功率MOSFET
文件页数: 2/5页
文件大小: 324K
代理商: GSS4936
GSS4936
Page: 2/5
ISSUED DATE :2005/10/31
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
25
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.03
-
V/ :
Reference to 25 : , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
6.5
-
S
VDS=10V, ID=5A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
:
-
1
uA
VDS=25V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
25
uA
VDS=20V, VGS=0
-
37
VGS=10V, ID=5A
Static Drain-Source On-Resistance2
RDS(ON)
-
60
m
VGS=4.5V, ID=3.5A
Total Gate Charge2
Qg
-
6.9
-
Gate-Source Charge
Qgs
-
1.2
-
Gate-Drain (“Miller”) Change
Qgd
-
4.5
-
nC
ID=5A
VDS=16V
VGS=5V
Turn-on Delay Time2
Td(on)
-
6
-
Rise Time
Tr
-
17.5
-
Turn-off Delay Time
Td(off)
-
14.5
-
Fall Time
Tf
-
5.5
-
ns
VDS=16V
ID=5A
VGS=10V
RG=3.3
RD=3.2
Input Capacitance
Ciss
-
218
-
Output Capacitance
Coss
-
155
-
Reverse Transfer Capacitance
Crss
-
63
-
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.2
V
IS=1.7A, VGS=0V, Tj=25 :
Continuous Source Current (Body Diode)
IS
-
1.67
A
VD=VG=0V, VS=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad.
:
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